Addressable Nanowire Field-Effect-Transistor Biosensors With Local Backgates

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Direct electrical detection of the binding of antibody and antigen of avian influenza virus was demonstrated through a biosensor derived from a double-gate FinFET. A simple detection method was employed in which the charge effect coming from the biomolecules was observed through the threshold voltage V-T shift. Due to the presence of a local backgate, the proposed device is individually addressable and the operating voltage is markedly low compared with similar nanowire-type biosensors. Furthermore, its unique structure allows for the channel to be immune to the noise from the biomolecules, which can be problematic for nanogap field-effect-transistor biosensors. The proposed device is complementary metal-oxide-semiconductor compatible and highly reproducible, and monolithic integration with the readout circuits is achievable. Hence, this approach provides a step toward the large-scale development of sensor chips for their potential use in medicine and biotechnology.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2012-09
Language
English
Article Type
Article
Keywords

SILICON NANOWIRES; ELECTRICAL DETECTION; SENSITIVITY; SENSORS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.9, pp.2507 - 2511

ISSN
0018-9383
DOI
10.1109/TED.2012.2201484
URI
http://hdl.handle.net/10203/102270
Appears in Collection
EE-Journal Papers(저널논문)
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