DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Joon-Soo | ko |
dc.contributor.author | Lee, Seung-Won | ko |
dc.contributor.author | Hwang, Young-Hwan | ko |
dc.contributor.author | Kim, Yong-Ho | ko |
dc.contributor.author | Yoo, Seung-Hyup | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2013-03-12T07:53:23Z | - |
dc.date.available | 2013-03-12T07:53:23Z | - |
dc.date.created | 2012-06-15 | - |
dc.date.created | 2012-06-15 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.5, pp.G13 - G15 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101705 | - |
dc.description.abstract | Sol-gel derived oligosiloxane resins are cured under air or N-2 by a photo-initiated thiol-ene reaction. The cured film was fabricated as a dielectric layer for use in an organic thin film transistor, and offers a higher dielectric constant (4.13) than silicon dioxide (3.9). We investigated the effects of the curing conditions of a thiol-ene reaction on the TFT performance depending on air or N-2. In the N-2 conditions, hydroperoxide group (-OOH) free films were generated and they showed low leakage current density and hysteresis free behavior with higher mobility than those fabricated in air. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.021205esl] All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | ELECTRONICS | - |
dc.subject | INSULATORS | - |
dc.subject | CHEMISTRY | - |
dc.title | Photo-Curable Sol-Gel Hybrid Film as a Dielectric Layer by a Thiol-ene Reaction in Air or N-2 for Organic Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000301656700014 | - |
dc.identifier.scopusid | 2-s2.0-84860144176 | - |
dc.type.rims | ART | - |
dc.citation.volume | 15 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | G13 | - |
dc.citation.endingpage | G15 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/2.021205esl | - |
dc.contributor.localauthor | Yoo, Seung-Hyup | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | CHEMISTRY | - |
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