DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Byeol | ko |
dc.contributor.author | Lee, Seung-Won | ko |
dc.contributor.author | Park, Kwangchol | ko |
dc.contributor.author | Park, Chong-Ook | ko |
dc.contributor.author | Rha, Sa-Kyun | ko |
dc.contributor.author | Lee, Won-Jun | ko |
dc.date.accessioned | 2013-03-12T07:26:51Z | - |
dc.date.available | 2013-03-12T07:26:51Z | - |
dc.date.created | 2012-03-07 | - |
dc.date.created | 2012-03-07 | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.12, no.2, pp.434 - 436 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101664 | - |
dc.description.abstract | We produced dielectric stacks composed of ALD SiO2 and ALD Al2O3, such as SiO2/Al2O3, Al2O3/SiO2, and SiO2/Al2O3/SiO2, and measured the leakage currents through the stacks in comparison with those of the single oxide layers. SiO2/Al2O3 shows lowest leakage current for negative bias region below 6.4 V, and Al2O3/SiO2 showed highest current under negative biases below 4.5 V. Two distinct electron conduction regimes are observed for Al2O3 and SiO2/Al2O3. Poole-Frenkel emission is dominant at the high-voltage regime for both dielectrics, whereas the direct tunneling through the dielectric is dominant at the low-voltage regime. The calculated transition voltage between two regimes for SiO2 (6.5 nm)/Al2O3 (12.6 nm) is -6.4 V, which agrees well with the experimental observation (-6.1 V). For the same EOT of entire dielectric stack, the transition voltage between two regimes decreases with thinner SiO2 layer. (C) 2011 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | NONVOLATILE MEMORY DEVICES | - |
dc.subject | TUNNEL BARRIERS | - |
dc.subject | FLASH MEMORY | - |
dc.subject | REDUCTION | - |
dc.title | The electrical properties of dielectric stacks of SiO2 and Al2O3 prepared by atomic layer deposition method | - |
dc.type | Article | - |
dc.identifier.wosid | 000297003600015 | - |
dc.identifier.scopusid | 2-s2.0-81155133835 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 434 | - |
dc.citation.endingpage | 436 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2011.07.045 | - |
dc.contributor.localauthor | Park, Chong-Ook | - |
dc.contributor.nonIdAuthor | Han, Byeol | - |
dc.contributor.nonIdAuthor | Lee, Seung-Won | - |
dc.contributor.nonIdAuthor | Rha, Sa-Kyun | - |
dc.contributor.nonIdAuthor | Lee, Won-Jun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Dielectric stack | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY DEVICES | - |
dc.subject.keywordPlus | TUNNEL BARRIERS | - |
dc.subject.keywordPlus | FLASH MEMORY | - |
dc.subject.keywordPlus | REDUCTION | - |
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