DC Field | Value | Language |
---|---|---|
dc.contributor.author | Baek, David J. | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Moon, Dong-Il | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2013-03-12T06:33:29Z | - |
dc.date.available | 2013-03-12T06:33:29Z | - |
dc.date.created | 2012-06-15 | - |
dc.date.created | 2012-06-15 | - |
dc.date.issued | 2012-02 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.100, no.9 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/101529 | - |
dc.description.abstract | Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a nanogap between the gate and the channel, GO was embedded after the complete device fabrication. By applying a proper gate voltage, charge trapping, and de-trapping within the GO was enabled and resulted in large threshold voltage shifts. The employment of GO with FinFET in our work suggests that graphitic materials can potentially play a significant role for future nanoelectronic applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690670] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GRAPHITE OXIDE | - |
dc.subject | SHEETS | - |
dc.title | Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000301504800053 | - |
dc.identifier.scopusid | 2-s2.0-84863294845 | - |
dc.type.rims | ART | - |
dc.citation.volume | 100 | - |
dc.citation.issue | 9 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3690670 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | nanoelectronics | - |
dc.subject.keywordAuthor | nanowires | - |
dc.subject.keywordAuthor | random-access storage | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordPlus | GRAPHITE OXIDE | - |
dc.subject.keywordPlus | SHEETS | - |
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