Relationship between domain structure and film thickness in epitaxial PbTiO3 films deposited on Mg(001) by reactive sputtering

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dc.contributor.authorChoi, WKko
dc.contributor.authorChoi, Si-Kyungko
dc.contributor.authorLee, HyuckMoko
dc.date.accessioned2009-07-21T05:38:40Z-
dc.date.available2009-07-21T05:38:40Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-12-
dc.identifier.citationJOURNAL OF MATERIALS RESEARCH, v.14, no.12, pp.4677 - 4684-
dc.identifier.issn0884-2914-
dc.identifier.urihttp://hdl.handle.net/10203/10151-
dc.description.abstractThe epitaxial PbTiO3 thin films of different thickness were prepared on MgO(001) substrates by the reactive direct-current magnetron sputtering. The volume fraction of c domains, alpha, which was measured by x-ray diffractometry, increased rapidly from zero with the film thickness, being saturated at about 90% above 100 nm. The films were annealed in a PbO atmosphere at 700 degrees C for 8 h, and they were used to study the composition change in the Pb/(Pb + Ti) ratio and the relaxation of the residual intrinsic stress. The relationship between change of alpha and composition was weak. The stress state was calculated through the finite-element method. As for the small thickness, the tensile epitaxial stress overwhelmed compressive intrinsic and thermal stresses, and the domain structure was a-domain oriented. As for the large thickness, the compressive intrinsic stress together with the thermal stress overcame the tensile epitaxial stress, and the population turned into c domain.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherMATERIALS RESEARCH SOCIETY-
dc.subjectFERROELECTRIC THIN-FILMS-
dc.subjectINTRINSIC STRESS-
dc.subjectRELAXATION-
dc.subjectDEPENDENCE-
dc.subjectORIGIN-
dc.subjectSTRAIN-
dc.titleRelationship between domain structure and film thickness in epitaxial PbTiO3 films deposited on Mg(001) by reactive sputtering-
dc.typeArticle-
dc.identifier.wosid000084155000032-
dc.identifier.scopusid2-s2.0-0033353868-
dc.type.rimsART-
dc.citation.volume14-
dc.citation.issue12-
dc.citation.beginningpage4677-
dc.citation.endingpage4684-
dc.citation.publicationnameJOURNAL OF MATERIALS RESEARCH-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Si-Kyung-
dc.contributor.localauthorLee, HyuckMo-
dc.contributor.nonIdAuthorChoi, WK-
dc.type.journalArticleArticle-
dc.subject.keywordPlusFERROELECTRIC THIN-FILMS-
dc.subject.keywordPlusINTRINSIC STRESS-
dc.subject.keywordPlusRELAXATION-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusORIGIN-
dc.subject.keywordPlusSTRAIN-
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