Thermistor behavior of PEDOT:PSS thin film

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The temperature-dependent resistance changing characteristics (thermistor behaviors) of a poly(3,4-ethylenedioxythophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin film are investigated in the 30-100 degrees C range using Greek-cross and bar patterns. The PEDOT:PSS film was spin-coated onto a Si wafer passivated with a SiO(2) layer, and a conventional dry etching technique was used to pattern the PEDOT:PSS film in conjunction with a nitride etch mask layer. Cr/Au was used for the electrode material. It was found that the characteristic temperature (T(o)) and resistivity of the PEDOT:PSS film have an inversely proportional relationship with the number of coatings and the number of interfaces between multiply coated PEDOT:PSS layers. It was also found that as the number of coatings and the number of the interfaces increase, lower temperature-dependent resistance changes are observed. The temperature coefficient of resistance (TCR) value of 60 nm thick PEDOT:PSS film was slightly larger than or comparable to that of a conventional metal (Au or Pt) thermistor. The possibility of utilizing the PEDOT:PSS thin film in thermistor applications is discussed. (C) 2009 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2009-06
Language
English
Article Type
Article
Keywords

CONDUCTIVITY; POLY(3,4-ETHYLENEDIOXYTHIOPHENE)/POLY(4-STYRENE-SULFONATE); ENHANCEMENT; MORPHOLOGY; SUBSTRATE; TRANSPORT; SOLVENT

Citation

SYNTHETIC METALS, v.159, no.12, pp.1174 - 1177

ISSN
0379-6779
DOI
10.1016/j.synthmet.2009.02.006
URI
http://hdl.handle.net/10203/101079
Appears in Collection
EE-Journal Papers(저널논문)
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