A K-Band High-Gain Down-Conversion Mixer in 0.18 mu m CMOS Technology

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A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2009-04
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.4, pp.227 - 229

ISSN
1531-1309
DOI
10.1109/LMWC.2009.2015504
URI
http://hdl.handle.net/10203/100718
Appears in Collection
EE-Journal Papers(저널논문)
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