DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Dukju | ko |
dc.contributor.author | Kim, Dong-Wook | ko |
dc.contributor.author | Hong, Songcheol | ko |
dc.date.accessioned | 2013-03-11T23:51:31Z | - |
dc.date.available | 2013-03-11T23:51:31Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.19, no.4, pp.227 - 229 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | http://hdl.handle.net/10203/100718 | - |
dc.description.abstract | A high gain CMOS down conversion mixer with a gain enhancement technique is presented. This technique includes negative resistance generation, parasitic capacitance cancellation and current-injection. These are implemented with an additional circuitry. This mixer has a conversion gain of 9.12 dB, input 1 dB compression point of -11 dBm at 24 GHz, while consuming 16.2 mW from 1.8 V supply. Between 22 and 26 GHz, the LO-to-RF and RF-to-LO isolations are better than 35 dB and 26 dB, respectively. | - |
dc.language | English | - |
dc.publisher | IEEE-Inst Electrical Electronics Engineers Inc | - |
dc.title | A K-Band High-Gain Down-Conversion Mixer in 0.18 mu m CMOS Technology | - |
dc.type | Article | - |
dc.identifier.wosid | 000265372400015 | - |
dc.identifier.scopusid | 2-s2.0-64249154611 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 227 | - |
dc.citation.endingpage | 229 | - |
dc.citation.publicationname | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.identifier.doi | 10.1109/LMWC.2009.2015504 | - |
dc.contributor.localauthor | Hong, Songcheol | - |
dc.contributor.nonIdAuthor | Kim, Dong-Wook | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | Gilbert cell | - |
dc.subject.keywordAuthor | high gain | - |
dc.subject.keywordAuthor | K-band | - |
dc.subject.keywordAuthor | mixer | - |
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