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6
Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric

Jeon, Hyun Bae; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091, 2020-07

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