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Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun , Soung Soon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786, 1996-11 |
Improved TiN film as a diffusion barrier between copper and silicon Rha, SK; Lee, WJ; Lee, SY; Hwang, YS; Lee, YJ; Kim, DI; Kim, DW; et al, THIN SOLID FILMS, v.320, no.1, pp.134 - 140, 1998-05 |
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