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Showing results 1 to 8 of 8

1
Graphene electrode with tunable charge transport in thin-film transistors

Park, Ick Joon; Kim, Tae In; Cho, In-Tak; Song, Chang-Woo; Yang, Ji-Woong; Park, Hongkeun; Cheong, Woo-Seok; et al, NANO RESEARCH, v.11, no.1, pp.274 - 286, 2018-01

2
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure

Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01

3
Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability

Park, Hamin; Oh, Dong Sik; Hong, Woonggi; Kang, Juyeon; Lee, Geon-Beom; Shin, Gwang Hyuk; Choi, Yang-Kyu; et al, ADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599, 2021-07

4
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

Lee, JS; Choi, Yang-Kyu; Ha, DW; Balasubramanian, S; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.3, pp.186 - 188, 2003-03

5
Low-frequency noise characteristics in p-channel FinFETs

Lee, JS; Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.722 - 724, 2002-12

6
Low-frequency noise characteristics of ultrathin body p-MOSFETs with molybdenum gate

Lee, JS; Ha, DW; Choi, Yang-Kyu; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.1, pp.31 - 33, 2003-01

7
Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Kim, Jong-Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; et al, 2D MATERIALS, v.3, no.3, 2016-09

8
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01

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