Showing results 1 to 12 of 12
Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps Kim, Choong-Ki; Yu, Chan Hak; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; Park, Hamin; Kim, Yong Min; et al, 2D MATERIALS, v.3, no.1, pp.015007, 2016-03 |
Deep learning-based noise robust flexible piezoelectric acoustic sensors for speech processing Jung, Young Hoon; Pham, Trung Xuan; Issa, Dias; Wang, Hee Seung; Lee, Jae Hee; Chung, Mingi; Lee, Bo-Yeon; et al, NANO ENERGY, v.101, 2022-10 |
Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors Kim, Taeho; Nam, Yunyong; Hur, Ji-Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, NANOTECHNOLOGY, v.27, no.32, 2016-08 |
Efficient Suppression of Defects and Charge Trapping in High Density In-Sn-Zn-O Thin Film Transistor Prepared using Microwave-Assisted Sputter Goh, Youngin; Ahn, Jaehan; Lee, Jeong Rak; Park, Wan Woo; Park, Sang-Hee Ko; Jeon, Sanghun, ACS APPLIED MATERIALS & INTERFACES, v.9, no.42, pp.36962 - 36970, 2017-10 |
G(m)-Boosted Differential Drain-to-Source Feedback Colpitts CMOS VCO Hong, Jong-Phil; Lee, Sang-Gug, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.59, no.7, pp.1811 - 1821, 2011-07 |
High mobility and high stability glassy metal-oxynitride materials and devices Lee, Eunha; Kim, Taeho; Benayad, Anass; Hur, Jihyun; Park, Gyeong-Su; Jeon, Sanghun, SCIENTIFIC REPORTS, v.6, 2016-04 |
High-Performance Field-Effect Transistor and Logic Gates Based on GaS-MoS(2 )van der Waals Heterostructure Shin, Gwang Hyuk; Lee, Geon-Beom; An, Eun-Su; Park, Cheolmin; Jin, Hyeok Jun; Lee, Khang June; Oh, Dong-Sik; et al, ACS APPLIED MATERIALS & INTERFACES, v.12, no.4, pp.5106 - 5112, 2020-01 |
Hybrid Gate Dielectric of MoS2 Transistors for Enhanced Photo-Electronic Stability Park, Hamin; Oh, Dong Sik; Hong, Woonggi; Kang, Juyeon; Lee, Geon-Beom; Shin, Gwang Hyuk; Choi, Yang-Kyu; et al, ADVANCED MATERIALS INTERFACES, v.8, no.14, pp.2100599, 2021-07 |
Improved Self-Curing Effect in a MOSFET with Gate Biasing Lee, Geon-Beom; Jung, Jin-Woo; Kim, Choong-Ki; Bang, Tewook; Yoo, Min-Soo; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.42, no.12, pp.1731 - 1734, 2021-12 |
Influence of Hf contents on interface state properties in a-HfInZnO thin-film transistors with SiNx/SiOx gate dielectrics Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, APPLIED PHYSICS LETTERS, v.99, no.18, 2011-10 |
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications Jeon, Sanghun; Park, Sungho; Song, Ihun; Hur, Ji-Hyun; Park, Jaechul; Kim, Hojung; Kim, Sunil; et al, ACS APPLIED MATERIALS & INTERFACES, v.3, no.1, pp.1 - 6, 2011-01 |
The Influence of Hydrogen on Defects of In-Ga-Zn-O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3 Kim, Taeho; Nam, Yunyong; Hur, Jihyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE ELECTRON DEVICE LETTERS, v.37, no.9, pp.1131 - 1134, 2016-09 |
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