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Showing results 1 to 7 of 7

1
Atomistically observing real-space structure of composition modulated (Nb0.94V0.06)(10)(SixGe1-x)(7) nanowires with ultralow resistivity

Lee, Sunghun; In, Juneho; Kim, Si-in; Park, Yun Chang; Kim, Hyunju; Yoon, Hana; Kim, Jinhee; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.8, pp.1674 - 1679, 2013-02

2
DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

HWANG, CS; PARK, SO; KANG, CS; CHO, HJ; KANG, HK; AHN, ST; LEE, MY, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.9B , pp.5178 - 5183, 1995-09

3
Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

Ahn, Kyung-Min; Kang, Seung-Mo; Ahn, Byung-Tae, CURRENT APPLIED PHYSICS, v.12, no.6, pp.1454 - 1458, 2012-11

4
High-Quality Polycrystalline Silicon Film Crystallized from Amorphous Silicon Film using NiCl2 Vapor

Kang, Seung-Mo; Ahn, Kyung-Min; Ahn, Byung-Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.29 - 32, 2012

5
Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations

Shin, Mincheol; Park, Yongjin; Kong, Ki-jeong; Chang, Hyunju, APPLIED PHYSICS LETTERS, v.98, no.17, pp.173501, 2011-04

6
Power Gating: Circuits, Design Methodologies, and Best Practice for Standard-Cell VLSI Designs

Shin, Young-Soo; Seomun, Jun; Choi, Kyu-Myung; Sakurai, Takayasu, ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, v.15, no.4, 2010-09

7
SUPPRESSION OF LEAKAGE CURRENT IN N-CHANNEL POLYSILICON THIN-FILM TRANSISTORS USING NH3 ANNEALING

CHOI, DS; HUR, SH; YANG, GY; Han, Chul-Hi; Kim, Choong Ki, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.2B, pp.882 - 885, 1995-02

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