Browse by Author Noh, Hyeon-Kyun
Showing results 1 to 17 of 17
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Young-Jun; Hwang, Jin-Heui; Noh, Hyeon-Kyun; Bang, Jun-Hyeok; Ryu, Byung-Ki; Chang, Kee-Joo, MICROELECTRONIC ENGINEERING, v.89, pp.120 - 123, 2012-01 |
| Atomic and electronic structure of O-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Ryu, Byungki; Lee, Woo-Jin; Chang, Kee-Joo, 31st International Conference on the Physics of Semiconductors, ICPS, 2012-07 |
| Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces Noh, Hyeon-Kyun; Oh, Young-Jun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2907 - 2910, 2012-08 |
| Effects of O-vacancy defects, hydrogenation, thermal annealing, and electric fields on the stability of oxide-based thin-film transistors Noh, Hyeon-Kyun; Oh, Young Jun; Chang, Kee-Joo, The 2nd International Conference on Advanced Electromaterials, ICAE, 2013-11 |
| Electric-field-induced drift motion of charged oxygen vacancy in amorphous In-Ga-Zn-O semiconductors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, The 16th International Symposium on the Physics of Semiconductors and Applications, ISPSA, 2013-07 |
| Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, Kee-Joo; Ryu, Byung-Ki; Lee, Woo-Jin, PHYSICAL REVIEW B, v.84, no.11, pp.115205 - 115205, 2011-09 |
| First-principles study of oxygen vacancy in amorphous hafnium silicates = 비정질 하프늄 실리케이트 구조 내에서의 산소 결핍 결함에 관한 제일원리 연구link Noh, Hyeon-Kyun; 노현균; et al, 한국과학기술원, 2009 |
| First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 Oh, Young-Jun; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICA B-CONDENSED MATTER, v.407, no.15, pp.2989 - 2992, 2012-08 |
| First-principles study on defects related to the instability of MOSFET and TFT devices = 제일원리 계산을 통한 MOSFET 및 TFT 소자의 불안정성 관련 결함에 대한 연구link Noh, Hyeon-Kyun; 노현균; et al, 한국과학기술원, 2013 |
| Hybrid functional and quasiparticle calculations of the Schottky barrier height at TiN/HfO2 interface Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 2014 APS March Meeting, APS, 2014-03 |
| Hybrid functional versus quasiparticle calculations for the Schottky barrier and effective work function at TiN/HfO2 interface Oh, Young-Jun; Lee, Alex Taekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, PHYSICAL REVIEW B, v.87, no.7, pp.075325, 2013-02 |
| Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Noh, Hyeon-Kyun; Ryu, Byungki; Choi, Eun-Ae; Bang, Junhyeok; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.95, no.8, pp.082905 - 082905, 2009-08 |
| Many-body quasiparticle and Hybrid Functional Calculations of the Schottky barrier Height at TiN/HfO2 interface Oh, Young Jun; Lee, Alex Tekyung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 16th Asian Workshop on First-Principles Electronic Structure Calculations, CSRC, 2013-10 |
| Mechanisms for boron diffusion and segregation at the Si/SiO2 interface Oh, Young Jun; Kim, Geun-Myung; Noh, Hyeon-Kyun; Chang, Kee-Joo, 31st International Conference on the Physics of Semiconductors, ICPS, 2012-07 |
| O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors Ryu, Byung-Ki; Noh, Hyeon-Kyun; Choi, Eun-Ae; Chang, Kee-Joo, APPLIED PHYSICS LETTERS, v.97, no.2, pp.022108 - 022108, 2010-07 |
| Role of Oxygen-Related Defects in the Instability of Amorphous In-Ga-Zn-O Thin FlimTransistor Oh, Young-Jun; HAN, WOOHYUN; Noh, Hyeon-Kyun; Chang, Kee-Joo, 32nd International Conference on the Physics of Semiconductors, ICPS, 2014-08 |
The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.16, no.3, pp.034902 - 034902, 2015-06 |
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- 32,945 2020 - 2024
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