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1
Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors

Kim, SangHyeon; Ikku, Yuki; Yokoyama, Masafumi; Nakane, Ryosho; Li, Jian; Kao, Yung-Chung; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.105, no.4, 2014-07

2
Formation of III-V-on-insulator structures on Si by direct wafer bonding

Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09

3
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03

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