Browse by Subject MOSFET
Showing results 75 to 81 of 81
| Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current Lee, Tae In; Ahn, Hyunjun; 김민주; Shin, Eui Joong; Lee, Seung Hwan; Shin, Sung Won; Hwang, Wan Sik; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.4, pp.502 - 505, 2019-04 |
| Ultrathin-body SOI MOSFET for deep-sub-tenth micron era Choi, Yang-Kyu; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255, 2000-05 |
| Vacuum gate dielectric gate-all-around nanowire for hot carrier injection and bias temperature instability free transistor Han, Jin-Woo; Moon, Dong-Il; Oh, Jae Sub; Choi, Yang-Kyu; Meyyappan, M., APPLIED PHYSICS LETTERS, v.104, no.25, 2014-06 |
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Kim, Hojin; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10 |
| Vertically Integrated Unidirectional Biristor Moon, Dong-Il; Choi, Sung-Jin; Kim, Sung-Ho; Oh, Jae-Sub; Kim, Young-Su; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.32, no.11, pp.1483 - 1485, 2011-11 |
| 기판접착을 이용한 몸체접지형SOI nMOSFET에 대한 연구 = Study on grounded body SOI n-channel MOSFET by wafer bondinglink 강원구; Kang, Won-Gu; et al, 한국과학기술원, 1996 |
| 원자층증착법에 의한 $HfO_2$ 게이트절연막의 성장과 플라즈마처리에 의한 질화에 관한 연구 = Study on $HfO_2$ gate dielectric grown by atomic layer deposition and its nitridation by plasma treatmentlink 박건식; Park, Kun-Sik; et al, 한국과학기술원, 2011 |
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