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SCALING THE SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INTO THE 0.1-MU-M REGIME USING VERTICAL DOPING ENGINEERING YAN, RH; OURMAZD, A; LEE, KF; Jeon, DukYoung; PINTO, MR, APPLIED PHYSICS LETTERS, v.59, no.25, pp.3315 - 3317, 1991-12 |
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