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Showing results 213421 to 213440 of 279406

213421
Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory

Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10

213422
Vertical-S 기동 표적에 대한 미사일 최적유도법칙

이기훈; 탁민제, 한국항공우주학회 추계학술발표회, 한국항공우주학회, 2002-11

213423
Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Lee, Jae Eun; Choi, Sung-Yool, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11

213424
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Kim, Hojin; Choi, Sung-Yool, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10

213425
Vertical-Tunneling Field-Effect Transistor Based on WSe2-MoS2 Heterostructure with Ion Gel Dielectric

Jeon, Hyun Bae; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, ADVANCED ELECTRONIC MATERIALS, v.6, no.7, pp.2000091, 2020-07

213426
Vertically aligned carbon nanopillars with size and spacing control for a transparent field emission display

Lee, Seok Woo; Lee, Chang Hwa; Lee, Jung A.; Lee, Seung Seob, NANOTECHNOLOGY, v.24, no.2, 2013-01

213427
Vertically aligned carbon nanotubular structure for guiding uniform lithium deposition via capillary pressure as stable metallic lithium anodes

Moorthy, Brindha; Kim, Joo-Hyung; Lee, Hyun-Wook; Kim, Do Kyung, ENERGY STORAGE MATERIALS, v.24, pp.602 - 609, 2020-01

213428
Vertically aligned carbon nanowires (CNWs) Top-down approach using photolithography and pyrolysis

Lee, SW; Lee, JA; Lee, Seung Seob, 2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008, pp.604 - 607, 2008-06-01

213429
Vertically aligned graphene prepared by the electrochemical anodization of graphite foil for supercapacitor electrodes

Lee, Na Eun; Lee, Jaewoo; Jeong, Heon Yong; Lee, Sang Yoon; Cho, Sung Oh, JOURNAL OF POWER SOURCES, v.526, 2022-04

213430
Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission

Ebaid, Mohamed; Kang, Jin-Ho; Yoo, Yang-Seok; Lim, Seung-Hyuk; Cho, Yong-Hoon; Ryu, Sang-Wan, SCIENTIFIC REPORTS, v.5, pp.17003, 2015-11

213431
Vertically Aligned Nanopatterns of Amine-Functionalized Ti(3)C(2)MXene via Soft Lithography

Song, Tae-Eun; Yun, Hwajin; Kim, Yong-Jae; Jeon, Ho Seung; Ha, Kyungryul; Jung, Hee-Tae; Han, Hee; et al, ADVANCED MATERIALS INTERFACES, v.7, no.18, pp.2000424, 2020-09

213432
Vertically aligned nanostructures for a reliable and ultrasensitive SERS-active platform: Fabrication and engineering strategies

Liu, Yang; Kim, Minjoon; Cho, Seunghee H.; Jung, Yeon Sik, NANO TODAY, v.37, 2021-04

213433
Vertically Aligned Nickel Nanowire/Epoxy Composite for Electrical and Thermal Conducting Material

Lee, Hyeong-Gi; Paik, Kyung-Wook, The 62nd Electronic Components and Technology Conference, IEEE, 2012-05

213434
Vertically aligned P(VDF-TrFE) core-shell structures on flexible pillar arrays

Choi, Yoon-Young; Yun, Tae Gwang; Qaiser, Nadeem; Paik, Haemin; Roh, Hee Seok; Hong, Jongin; Hong, Daniel Seungbum; et al, SCIENTIFIC REPORTS, v.5, 2015-06

213435
Vertically Aligned Single-Crystalline Ferromagnetic Ni(3)Co Nanowires

Bagkar, Nitin; Seo, Kwan-Yong; Yoon, Ha-Na; In, June-Ho; Jo, Young-Hoon; Kim, Bong-Soo, CHEMISTRY OF MATERIALS, v.22, no.5, pp.1831 - 1835, 2010-03

213436
Vertically Aligned Single-Walled Carbon Nanotubes Supported by a Colloidal Monolayer and Their Field Emission Characteristics

Jung, HeeTae; Ko, YK; Jeong, N; Seo, Y, International Conference on Nanoscience and Technology, pp.0 - 0, 2006-07-01

213437
Vertically Alternating Impedance Electromagnetic Bandgap (VAI-EBG) Structure for Noise Mitigation in Multi-layer PCBs

Kim, myunghoi; Koo, Kyoungchoul; Kong, Sunkyu; Bae, Bumhee; Lee, Sangrok; Kim Joungho, 2011 Asia-Pacific Symposium on Electromagnetic Compatibility, 2011 Asia-Pacific Symposium on Electromagnetic Compatibility, 2011-05-17

213438
Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

Hong, Seul Ki; Bong, Jae Hoon; Cho, Byung-Jin; Hwang, Wan Sik, SMALL, v.13, no.3, 2017-01

213439
Vertically Integrated CMOS Ternary Logic Device with Low Static Power Consumption and High Packing Density

Han, Joon-Kyu; Lee, Jung Woo; Kim, Young Bin; Yun, Seong-Yun; Yu, Jiman; Lee, Keon Jae; Choi, Yang-Kyu, ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp.51429 - 51434, 2023-10

213440
Vertically Integrated Multiple Nanowire Field Effect Transistor

Lee, Byung Hyun; Kang, Min Ho; Ahn, Dae Chul; Park, Jun Young; Bang, Tewook; Jeon, Seung Bae; Hur, Jae; et al, NANO LETTERS, v.15, no.12, pp.8056 - 8061, 2015-12

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