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Improved Electrical Characteristics of Amorphous Oxide TFTs Based on TiOx Channel Layer Grown by Low-Temperature MOCVD Park, JW; Han, SW; Jeon, N; Jang, J; Yoo, Seunghyup, IEEE ELECTRON DEVICE LETTERS, v.29, no.12, pp.1319 - 1321, 2008-12 |
New n-type TiO2 transparent active channel TFTs fabricated with a solution process Park, JW; Yoo, Seunghyup, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.724 - 727, 2008-07 |
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