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Showing results 1 to 11 of 11

1
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.114, no.16, 2013-10

2
Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, APPLIED PHYSICS LETTERS, v.104, no.26, 2014-06

3
Formation of III-V-on-insulator structures on Si by direct wafer bonding

Yokoyama, Masafumi; Iida, Ryo; Ikku, Yuki; Kim, Sanghyeon; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.9, 2013-09

4
High I-on/I-off and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

Noguchi, Munetaka; Kim, SangHyeon; Yokoyama, Masafumi; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, JOURNAL OF APPLIED PHYSICS, v.118, no.4, 2015-07

5
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and V-th Tunability

Kim, Sang-Hyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.5, pp.1354 - 1360, 2014-05

6
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology

Kim, SangHyeon; Yokoyama, Masafumi; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; Takenaka, Mitsuru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.10, pp.3342 - 3350, 2013-10

7
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12

8
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09

9
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Kim, SangHyeon; Yokoyama, Masafumi; Ikku, Yuki; Nakane, Ryosho; Ichikawa, Osamu; Osada, Takenori; Hata, Masahiko; et al, APPLIED PHYSICS LETTERS, v.104, no.11, 2014-03

10
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05

11
Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08

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