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Carbon doping Characteristics of GaAs and Al_{0.3} Ga_{0.7} As Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition using CCl_4 s.- i. kim; y. kim; m.-s. kim; c. k. kim; s.-k. min; Choochon Lee, JOURNAL OF CRYSTAL GROWTH, v.141, no.3-4, pp.324 - 330, 1994 |
Formation of shallow phosphorus layers by rapid thermal processing using a solid diffusion source k. t. kim; c. k. kim; b. j. cho; k. g. kim, JOURNAL OF THE KOREA INSTITUTE OF ELECTRONIC ENGINEERS, v.1, no.2, pp.105 - 109, 1988-09 |
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