Trans-cis isomerization and structure of dimeric [Me2M-mu-N(H)NPh2](2) (M = Al, Ga)

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dc.contributor.authorCho, Dko
dc.contributor.authorPark, JEko
dc.contributor.authorBae, BJko
dc.contributor.authorLee, Kko
dc.contributor.authorKim, Bongsooko
dc.date.accessioned2009-06-30T09:17:59Z-
dc.date.available2009-06-30T09:17:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-12-
dc.identifier.citationJOURNAL OF ORGANOMETALLIC CHEMISTRY, v.592, no.2, pp.162 - 167-
dc.identifier.issn0022-328X-
dc.identifier.urihttp://hdl.handle.net/10203/9899-
dc.description.abstractReaction of MMe3 (M = Al, Ga) with one equivalent of NH2NPh2 affords a dimeric complex [Me2M-mu-N(H)NPh2](2) [M = Al (1), M = Ga (2)] as a mixture of trans and cis isomers. Purification of 1 and 2 by recrystallization gives only trans isomers 1a and 2a, respectively. Variable-temperature H-1-NMR studies reveal that both 1 and 2 in solution undergo trans --> cis isomerization with free energy of activation (Delta G(c)double dagger) values of 15.9 for 1 and 18.3 kcal mol(-1) for 2. The solid state structures of trans isomers 1a and 2a have been determined by single-crystal X-ray diffraction studies. The molecular geometries of la and 2a consist of a centrosymmetric and dimeric unit (M-N)(2) with two bridging hydrazido groups and two terminal methyl groups bound to each metal atom. The two N-NPh2 groups are trans to each other with respect to the (M-N)(2) core plane. The coordination geometry of both metal and nitrogen atoms are distorted tetrahedral. (C) 1999 Elsevier Science S.A. All rights reserved.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherELSEVIER SCIENCE SA-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectSINGLE-SOURCE PRECURSORS-
dc.subjectEPITAXIAL-GROWTH-
dc.subjectALUMINUM NITRIDE-
dc.subjectGALLIUM NITRIDE-
dc.subjectBUFFER LAYER-
dc.subjectFILMS-
dc.subjectDERIVATIVES-
dc.subjectHYDRAZINE-
dc.titleTrans-cis isomerization and structure of dimeric [Me2M-mu-N(H)NPh2](2) (M = Al, Ga)-
dc.typeArticle-
dc.identifier.wosid000084488300002-
dc.identifier.scopusid2-s2.0-0001073931-
dc.type.rimsART-
dc.citation.volume592-
dc.citation.issue2-
dc.citation.beginningpage162-
dc.citation.endingpage167-
dc.citation.publicationnameJOURNAL OF ORGANOMETALLIC CHEMISTRY-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorKim, Bongsoo-
dc.contributor.nonIdAuthorCho, D-
dc.contributor.nonIdAuthorPark, JE-
dc.contributor.nonIdAuthorBae, BJ-
dc.contributor.nonIdAuthorLee, K-
dc.type.journalArticleArticle-
dc.subject.keywordAuthor1,1-diphenylhydrazine-
dc.subject.keywordAuthordimeric-
dc.subject.keywordAuthorhydrazidoalane-
dc.subject.keywordAuthorhydrazidogallane-
dc.subject.keywordAuthorprecursor-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusSINGLE-SOURCE PRECURSORS-
dc.subject.keywordPlusEPITAXIAL-GROWTH-
dc.subject.keywordPlusALUMINUM NITRIDE-
dc.subject.keywordPlusGALLIUM NITRIDE-
dc.subject.keywordPlusBUFFER LAYER-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusDERIVATIVES-
dc.subject.keywordPlusHYDRAZINE-
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