Crystallized HfLaO embedded tetragonal ZrO2 for dynamic random access memory capacitor dielectrics

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Cubic-structured HfLaO embedded tetragonal ZrO2 is investigated for application to a dynamic random access memory capacitor dielectric. It is found that hole injection is the determining factor of the leakage current in the ZrO2-HfLaO stack and thus HfLaO should be kept away from the electrode interface due to its smaller valance band offset than that of ZrO2. The insertion of cubic-structured HfLaO into tetragonal ZrO2 with an optimized thickness combination can effectively reduce the equivalent oxide thickness without increasing the leakage current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3583590]
Publisher
AMER INST PHYSICS
Issue Date
2011-04
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.98, no.17

ISSN
0003-6951
URI
http://hdl.handle.net/10203/98042
Appears in Collection
EE-Journal Papers(저널논문)
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