Solution-processed indium-zinc oxide transparent thin-film transistors

Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films were amorphous and highly transparent with >90% transmittance in the visible region with an optical bandgap of 3.1 eV. Spin-coated IZO TTFTs were operated in depletion mode and showed a field-effect mobility as high as 7.3 cm(2)/V s, a threshold voltage of 2.5 V, an on/off current ratio greater than 107, and a subthreshold slope of 1.47 V/decade. (C) 2007 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2008
Language
ENG
Keywords

ELECTRICAL-PROPERTIES; HIGH-PERFORMANCE; CHANNEL LAYER; SEMICONDUCTOR; TFT

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.1, pp.7 - 9

ISSN
1099-0062
DOI
10.1149/1.2800562
URI
http://hdl.handle.net/10203/9691
Appears in Collection
MS-Journal Papers(저널논문)
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