DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Chaun-Gi | ko |
dc.contributor.author | Seo, Seok-Jun | ko |
dc.contributor.author | Bae, Byeong-Soo | ko |
dc.date.accessioned | 2009-06-23T08:07:59Z | - |
dc.date.available | 2009-06-23T08:07:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.1, pp.7 - 9 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/9691 | - |
dc.description.abstract | Transparent thin-film transistors (TTFTs) with an indium-zinc oxide (IZO) active layer by the solution-processed deposition method were fabricated and their TFT characterization was examined. Solution-processed IZO thin films were amorphous and highly transparent with >90% transmittance in the visible region with an optical bandgap of 3.1 eV. Spin-coated IZO TTFTs were operated in depletion mode and showed a field-effect mobility as high as 7.3 cm(2)/V s, a threshold voltage of 2.5 V, an on/off current ratio greater than 107, and a subthreshold slope of 1.47 V/decade. (C) 2007 The Electrochemical Society. | - |
dc.description.sponsorship | The Korea Advanced Institute of Science and Technology assisted in meeting the publication costs of this article. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | CHANNEL LAYER | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | TFT | - |
dc.title | Solution-processed indium-zinc oxide transparent thin-film transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000250983500017 | - |
dc.identifier.scopusid | 2-s2.0-36148976499 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 7 | - |
dc.citation.endingpage | 9 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.2800562 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Bae, Byeong-Soo | - |
dc.contributor.nonIdAuthor | Choi, Chaun-Gi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL LAYER | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | TFT | - |
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