Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method

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Quantum transport of holes in one-, two- and three-dimensional devices is simulated based on the 6-band k . p method. Detailed numerical aspects for an efficient development of a k . p-based simulator are provided. In particular, real-space and k-space discretization schemes for devices of different dimensionality are described and their effectiveness in numerical implementation is compared. The mode-space approach for drastic reduction of computation time is also described. The capability of the k . p-based simulator is demonstrated by investigating various aspects of hole transport in devices of different dimensionality.
Publisher
SPRINGER
Issue Date
2011-06
Language
English
Article Type
Article
Keywords

SILICON

Citation

JOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50

ISSN
1569-8025
URI
http://hdl.handle.net/10203/94449
Appears in Collection
EE-Journal Papers(저널논문)
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