DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2013-03-08T22:10:12Z | - |
dc.date.available | 2013-03-08T22:10:12Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | JOURNAL OF COMPUTATIONAL ELECTRONICS, v.10, no.1-2, pp.44 - 50 | - |
dc.identifier.issn | 1569-8025 | - |
dc.identifier.uri | http://hdl.handle.net/10203/94449 | - |
dc.description.abstract | Quantum transport of holes in one-, two- and three-dimensional devices is simulated based on the 6-band k . p method. Detailed numerical aspects for an efficient development of a k . p-based simulator are provided. In particular, real-space and k-space discretization schemes for devices of different dimensionality are described and their effectiveness in numerical implementation is compared. The mode-space approach for drastic reduction of computation time is also described. The capability of the k . p-based simulator is demonstrated by investigating various aspects of hole transport in devices of different dimensionality. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | SILICON | - |
dc.title | Quantum transport of holes in 1D, 2D, and 3D devices: the k center dot p method | - |
dc.type | Article | - |
dc.identifier.wosid | 000300735800005 | - |
dc.identifier.scopusid | 2-s2.0-79959203898 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 44 | - |
dc.citation.endingpage | 50 | - |
dc.citation.publicationname | JOURNAL OF COMPUTATIONAL ELECTRONICS | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | k . p | - |
dc.subject.keywordAuthor | Hole | - |
dc.subject.keywordAuthor | MOSFET | - |
dc.subject.keywordAuthor | Nanowire | - |
dc.subject.keywordAuthor | Non-equilibrium Green&apos | - |
dc.subject.keywordAuthor | s function | - |
dc.subject.keywordAuthor | PMOS | - |
dc.subject.keywordAuthor | Device simulation | - |
dc.subject.keywordAuthor | Transistors | - |
dc.subject.keywordAuthor | Transport | - |
dc.subject.keywordAuthor | Valence band | - |
dc.subject.keywordPlus | SILICON | - |
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