Parasitic BJT Read Method for High-Performance Capacitorless 1T-DRAM Mode in Unified RAM

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A high-performance unified RAM without soft programming is demonstrated on a fully depleted FinFET structure. An oxide/nitride/oxide gate dielectric is integrated in a floating-body FinFET, thereby providing the versatile functions of nonvolatile Flash memory and high-speed capacitorless 1T-DRAM. A new read method involving the utilization of a parasitic bipolar junction transistor is employed for the capacitorless 1T-DRAM mode. This manner provides nondestructive reading and a high sensing current window (Delta I(S) > 45 mu A). As the nitride traps are filled with holes before activating the capacitorless 1T-DRAM mode, an undesirable contribution of hole trapping on a threshold voltage shift, i.e., soft programming, is inhibited without sacrificing the sensing current window.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2009-10
Language
English
Article Type
Article
Keywords

SINGLE-TRANSISTOR LATCH; SOI MOSFETS; URAM

Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.10, pp.1108 - 1110

ISSN
0741-3106
DOI
10.1109/LED.2009.2029353
URI
http://hdl.handle.net/10203/93822
Appears in Collection
EE-Journal Papers(저널논문)
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