Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process

Transient two-dimensional convection-diffusion model has been developed to simulate the segregation phenomena in batchwise and continuous Czochralski process. Numerical simulations have been performed using the finite element method and implicit Euler time integration. The mesh deformation due to the change of the melt depth in batchwise Czochralski process was considered. Experimental values of the growth and system, parameters for Czochralski growth of boron-doped, 4-in silicon single crystal were used in the numerical calculations. The experimental axial segregation in batchwise Czochralski process can be described successfully using convection-diffusion model. It has been demonstrated with this model that silicon single crystal with uniform axial dopant concentration can be grown and radial segregation can be suppressed in the continuous Czochralski process. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1999-03
Language
ENG
Keywords

CRYSTAL-GROWTH

Citation

JOURNAL OF CRYSTAL GROWTH, v.198, no.3, pp.120 - 124

ISSN
0022-0248
URI
http://hdl.handle.net/10203/9360
Appears in Collection
CBE-Journal Papers(저널논문)
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