Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

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We demonstrate a high-performance metal-high k insulator-metal (MIM) capacitor integrated with a Cu/low-k backend interconnection. The high-k used was laminated HfO2-Al2O3 with effective k similar to 19 and the low-k dielectric used was Black Diamond with k similar to 2.9. The MIM capacitor (similar to 13.4 fF/mu m(2)) achieved a Q-factor similar to 53 at 2.5 GHz and 11.7 pF. The resonant frequency f(r) was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (similar to 0.93 fF/mu m(2)) having similar capacitance 11.2 pF. The impacts of high-k insulator and low-k interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-k MIM could be a promising alternative capacitor structure for future high-performance RF applications.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-11
Language
English
Article Type
Article
Keywords

DIELECTRICS

Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795

ISSN
0741-3106
DOI
10.1109/LED.2005.857694
URI
http://hdl.handle.net/10203/93183
Appears in Collection
EE-Journal Papers(저널논문)
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