DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, MB | ko |
dc.contributor.author | Xiong, YZ | ko |
dc.contributor.author | Kim, SJ | ko |
dc.contributor.author | Balakumar, S | ko |
dc.contributor.author | Zhu, CX | ko |
dc.contributor.author | Li, MF | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Lo, GQ | ko |
dc.contributor.author | Balasubramanian, N | ko |
dc.contributor.author | Kwong, DL | ko |
dc.date.accessioned | 2013-03-08T13:57:33Z | - |
dc.date.available | 2013-03-08T13:57:33Z | - |
dc.date.created | 2012-07-25 | - |
dc.date.created | 2012-07-25 | - |
dc.date.issued | 2005-11 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/93183 | - |
dc.description.abstract | We demonstrate a high-performance metal-high k insulator-metal (MIM) capacitor integrated with a Cu/low-k backend interconnection. The high-k used was laminated HfO2-Al2O3 with effective k similar to 19 and the low-k dielectric used was Black Diamond with k similar to 2.9. The MIM capacitor (similar to 13.4 fF/mu m(2)) achieved a Q-factor similar to 53 at 2.5 GHz and 11.7 pF. The resonant frequency f(r) was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (similar to 0.93 fF/mu m(2)) having similar capacitance 11.2 pF. The impacts of high-k insulator and low-k interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-k MIM could be a promising alternative capacitor structure for future high-performance RF applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DIELECTRICS | - |
dc.title | Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application | - |
dc.type | Article | - |
dc.identifier.wosid | 000232821500005 | - |
dc.identifier.scopusid | 2-s2.0-27744564482 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 11 | - |
dc.citation.beginningpage | 793 | - |
dc.citation.endingpage | 795 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2005.857694 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yu, MB | - |
dc.contributor.nonIdAuthor | Xiong, YZ | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Balakumar, S | - |
dc.contributor.nonIdAuthor | Zhu, CX | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Lo, GQ | - |
dc.contributor.nonIdAuthor | Balasubramanian, N | - |
dc.contributor.nonIdAuthor | Kwong, DL | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cu/low-k | - |
dc.subject.keywordAuthor | backend | - |
dc.subject.keywordAuthor | high-k | - |
dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
dc.subject.keywordAuthor | radio frequency (RF) application | - |
dc.subject.keywordAuthor | resonant frequency | - |
dc.subject.keywordPlus | DIELECTRICS | - |
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