Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

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A high capacitance density (C-density) metal-insulator-metal (MIM) capacitor with niobium pentoxide (Nb2O5) whose k value is higher than 40, is developed for integrated RF bypass or decoupling capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a high C-density of > 17 fF/mu m(2) with excellent RF properties, while maintaining comparable leakage current and reliability properties with other high-k dielectrics. The capacitance from the dielectric is shown to be stable up to 20 GHz, and resonant frequency of 4.2 GHz and Q of 50 (at 1 GHz) is demonstrated when the capacitor is integrated using Cu-BEOL process.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2005-09
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627

ISSN
0741-3106
DOI
10.1109/LED.2005.854378
URI
http://hdl.handle.net/10203/92785
Appears in Collection
EE-Journal Papers(저널논문)
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