Hydrogenation effect on the Er luminescence in amorphous silicon quantum dot films

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dc.contributor.authorPark, NMko
dc.contributor.authorKim, TYko
dc.contributor.authorKim, KHko
dc.contributor.authorSung, GYko
dc.contributor.authorCho, KSko
dc.contributor.authorShin, JungHoonko
dc.contributor.authorKim, BHko
dc.contributor.authorPark, SJko
dc.contributor.authorLee, JKko
dc.contributor.authorNastasi, Mko
dc.date.accessioned2013-03-08T00:14:58Z-
dc.date.available2013-03-08T00:14:58Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-
dc.identifier.citationELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.63 - 64-
dc.identifier.issn1099-0062-
dc.identifier.urihttp://hdl.handle.net/10203/91574-
dc.description.abstractThe hydrogenation effect on the Er luminescence at 1.54 mum in an Er-doped amorphous Si quantum dot film was investigated. After hydrogenation, the luminescent properties were different between large-dot (2.5 nm) and small-dot (1.4 nm) samples. In particular, the number of optically active Er ions was increased in a large-dot sample, but decreased in a small-dot sample. We propose that the hydrogenation causes the Er migration toward an Si dot, and the luminescent property depending on the dot size is originated from the number of Er ions near an Si dot before hydrogenation. (C) 2005 The Electrochemical Society.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectERBIUM-DOPED SILICON-
dc.subject1.54 MU-M-
dc.subjectELECTROLUMINESCENCE-
dc.subjectOXIDE-
dc.titleHydrogenation effect on the Er luminescence in amorphous silicon quantum dot films-
dc.typeArticle-
dc.identifier.wosid000226293900040-
dc.identifier.scopusid2-s2.0-13544260583-
dc.type.rimsART-
dc.citation.volume8-
dc.citation.issue2-
dc.citation.beginningpage63-
dc.citation.endingpage64-
dc.citation.publicationnameELECTROCHEMICAL AND SOLID STATE LETTERS-
dc.identifier.doi10.1149/1.1850399-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorPark, NM-
dc.contributor.nonIdAuthorKim, TY-
dc.contributor.nonIdAuthorKim, KH-
dc.contributor.nonIdAuthorSung, GY-
dc.contributor.nonIdAuthorCho, KS-
dc.contributor.nonIdAuthorKim, BH-
dc.contributor.nonIdAuthorPark, SJ-
dc.contributor.nonIdAuthorLee, JK-
dc.contributor.nonIdAuthorNastasi, M-
dc.type.journalArticleArticle-
dc.subject.keywordPlusERBIUM-DOPED SILICON-
dc.subject.keywordPlus1.54 MU-M-
dc.subject.keywordPlusELECTROLUMINESCENCE-
dc.subject.keywordPlusOXIDE-
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