Pre-annealing effects on al metallization properties in high density FeRAM device

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Metallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La)(4)Ti3O12/Pt ferroelectric capacitor. The metal-1 films were deposited on both the Pt top electrode and the W bit-line after fabricating the contact holes. The contact filling behaviors of the metal-1 layers were mainly depended on the pre-annealing condition performed before depositing the metal-1 layers. The optimized pre-annealing conditions was 400 degrees C/N-2/30 min on W bit-line. From the result, a 16 Mb FeRAM device was successfully developed.
Publisher
TAYLOR FRANCIS LTD
Issue Date
2006
Language
English
Article Type
Article; Proceedings Paper
Keywords

BLT THIN-FILMS; FERROELECTRIC PROPERTIES; CAPACITOR STRUCTURE; (BI,LA)(4)TI3O12; INTEGRATION

Citation

INTEGRATED FERROELECTRICS, v.81, pp.113 - 122

ISSN
1058-4587
URI
http://hdl.handle.net/10203/89212
Appears in Collection
MS-Journal Papers(저널논문)
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