Pre-annealing effects on al metallization properties in high density FeRAM device

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dc.contributor.authorCho, KWko
dc.contributor.authorChoi, JHko
dc.contributor.authorYu, HSko
dc.contributor.authorKweon, SYko
dc.contributor.authorYeom, SJko
dc.contributor.authorKim, NKko
dc.contributor.authorChoi, ESko
dc.contributor.authorSun, HJko
dc.contributor.authorHong, SKko
dc.contributor.authorHong, TWko
dc.contributor.authorKim, IHko
dc.contributor.authorLee, JIko
dc.contributor.authorUr, SCko
dc.contributor.authorLee, YGko
dc.contributor.authorRyu, SLko
dc.contributor.authorChoi, Si-Kyungko
dc.date.accessioned2013-03-07T02:30:32Z-
dc.date.available2013-03-07T02:30:32Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2006-
dc.identifier.citationINTEGRATED FERROELECTRICS, v.81, pp.113 - 122-
dc.identifier.issn1058-4587-
dc.identifier.urihttp://hdl.handle.net/10203/89212-
dc.description.abstractMetallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La)(4)Ti3O12/Pt ferroelectric capacitor. The metal-1 films were deposited on both the Pt top electrode and the W bit-line after fabricating the contact holes. The contact filling behaviors of the metal-1 layers were mainly depended on the pre-annealing condition performed before depositing the metal-1 layers. The optimized pre-annealing conditions was 400 degrees C/N-2/30 min on W bit-line. From the result, a 16 Mb FeRAM device was successfully developed.-
dc.languageEnglish-
dc.publisherTAYLOR FRANCIS LTD-
dc.subjectBLT THIN-FILMS-
dc.subjectFERROELECTRIC PROPERTIES-
dc.subjectCAPACITOR STRUCTURE-
dc.subject(BI,LA)(4)TI3O12-
dc.subjectINTEGRATION-
dc.titlePre-annealing effects on al metallization properties in high density FeRAM device-
dc.typeArticle-
dc.identifier.wosid000238680800013-
dc.identifier.scopusid2-s2.0-33745855893-
dc.type.rimsART-
dc.citation.volume81-
dc.citation.beginningpage113-
dc.citation.endingpage122-
dc.citation.publicationnameINTEGRATED FERROELECTRICS-
dc.contributor.localauthorChoi, Si-Kyung-
dc.contributor.nonIdAuthorCho, KW-
dc.contributor.nonIdAuthorChoi, JH-
dc.contributor.nonIdAuthorYu, HS-
dc.contributor.nonIdAuthorKweon, SY-
dc.contributor.nonIdAuthorYeom, SJ-
dc.contributor.nonIdAuthorKim, NK-
dc.contributor.nonIdAuthorChoi, ES-
dc.contributor.nonIdAuthorSun, HJ-
dc.contributor.nonIdAuthorHong, SK-
dc.contributor.nonIdAuthorHong, TW-
dc.contributor.nonIdAuthorKim, IH-
dc.contributor.nonIdAuthorLee, JI-
dc.contributor.nonIdAuthorUr, SC-
dc.contributor.nonIdAuthorLee, YG-
dc.contributor.nonIdAuthorRyu, SL-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorhigh density FeRAM-
dc.subject.keywordAuthorsputtering method-
dc.subject.keywordAuthorAl metallization process-
dc.subject.keywordAuthorpre-annealing-
dc.subject.keywordAuthortungsten oxidation-
dc.subject.keywordPlusBLT THIN-FILMS-
dc.subject.keywordPlusFERROELECTRIC PROPERTIES-
dc.subject.keywordPlusCAPACITOR STRUCTURE-
dc.subject.keywordPlus(BI,LA)(4)TI3O12-
dc.subject.keywordPlusINTEGRATION-
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