Integration of microwave phase shifter with BST varactor onto TiO2/Si wafer

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A BST ferroelectric thin-film microwave phase shifter with interdigital capacitors on TiO2/Si substrate is presented. The interdigital capacitors have 230 mu m signal width, 100 pm signal to ground gap, and 10 mu m finger gap. The device, with phase shifts of 142 degrees and FoM of 107.3 degrees/dB applied voltage of 50 V at 16 GHz, has been realised. The TiO2 buffer layer grown by ALD enables successful integration of BST-based microwave tunable devices with Si wafer.
Publisher
INST ENGINEERING TECHNOLOGY-IET
Issue Date
2007-07
Language
English
Article Type
Article
Keywords

BUFFER LAYERS; THIN-FILMS; TA2O5

Citation

ELECTRONICS LETTERS, v.43, pp.757 - 759

ISSN
0013-5194
DOI
10.1049/el:20070448
URI
http://hdl.handle.net/10203/88652
Appears in Collection
EE-Journal Papers(저널논문)
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