Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation

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The charge storage and progranderase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-kappa charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2006-04
Language
English
Article Type
Article
Keywords

MOS DEVICE APPLICATIONS; GATE ELECTRODE; FLASH MEMORY; DIELECTRICS; METAL

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662

ISSN
0018-9383
DOI
10.1109/TED.2006.870273
URI
http://hdl.handle.net/10203/87894
Appears in Collection
EE-Journal Papers(저널논문)
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