DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tan, YN | ko |
dc.contributor.author | Chim, WK | ko |
dc.contributor.author | Choi, WK | ko |
dc.contributor.author | Joo, MS | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-06T18:08:30Z | - |
dc.date.available | 2013-03-06T18:08:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-04 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/87894 | - |
dc.description.abstract | The charge storage and progranderase mechanisms in polysilicon-oxide-nitride-oxide-silicon (SONOS) memory structures with charge-storage layers of different materials are investigated in this paper. In particular, the use of a HfAlO charge-storage layer in a SONOS-type memory structure is proposed. Compared to other high-kappa charge-storage layers, HfAlO has the advantage of high-speed program/erase of HfO2 as well as the good charge-retention time of Al2O3, which makes HfAlO a promising candidate for the charge-storage layer in a SONOS-type memory. The use of HfAlO with different HfO2 and Al2O3 compositions as a blocking-oxide layer in SONOS-type structures is also investigated. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MOS DEVICE APPLICATIONS | - |
dc.subject | GATE ELECTRODE | - |
dc.subject | FLASH MEMORY | - |
dc.subject | DIELECTRICS | - |
dc.subject | METAL | - |
dc.title | Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation | - |
dc.type | Article | - |
dc.identifier.wosid | 000236473500010 | - |
dc.identifier.scopusid | 2-s2.0-33645733710 | - |
dc.type.rims | ART | - |
dc.citation.volume | 53 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 654 | - |
dc.citation.endingpage | 662 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2006.870273 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Tan, YN | - |
dc.contributor.nonIdAuthor | Chim, WK | - |
dc.contributor.nonIdAuthor | Choi, WK | - |
dc.contributor.nonIdAuthor | Joo, MS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Flash memories | - |
dc.subject.keywordAuthor | hafnium aluminum oxide | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | high dielectric constant (high-kappa) | - |
dc.subject.keywordAuthor | polysiliconoxide-nitride-oxide-silicon (SONOS) | - |
dc.subject.keywordPlus | MOS DEVICE APPLICATIONS | - |
dc.subject.keywordPlus | GATE ELECTRODE | - |
dc.subject.keywordPlus | FLASH MEMORY | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | METAL | - |
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