Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain

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Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 mn show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2001-09
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.22, no.9, pp.447 - 448

ISSN
0741-3106
URI
http://hdl.handle.net/10203/85234
Appears in Collection
EE-Journal Papers(저널논문)
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