Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | ko |
| dc.contributor.author | Ha, DW | ko |
| dc.contributor.author | King, TJ | ko |
| dc.contributor.author | Hu, CM | ko |
| dc.date.accessioned | 2013-03-05T03:16:52Z | - |
| dc.date.available | 2013-03-05T03:16:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-09 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.22, no.9, pp.447 - 448 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/85234 | - |
| dc.description.abstract | Nanoscale ultrathin body (UTB) p-channel MOSFETs with body thickness down to 4 nm and raised source and drain (S/D) using selectively deposited Ge are demonstrated for the first time. Devices with gate length down to 30 mn show high drive current, low off current, and excellent short-channel behavior. Mobility enhancement and threshold-voltage shift due to the quantum confinement of inversion charge in the ultrathin body are investigated. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Nanoscale ultrathin body PMOSFETs with raised selective germanium source/drain | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000170716300011 | - |
| dc.identifier.scopusid | 2-s2.0-0035446820 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 22 | - |
| dc.citation.issue | 9 | - |
| dc.citation.beginningpage | 447 | - |
| dc.citation.endingpage | 448 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Ha, DW | - |
| dc.contributor.nonIdAuthor | King, TJ | - |
| dc.contributor.nonIdAuthor | Hu, CM | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | mobility enhancement | - |
| dc.subject.keywordAuthor | nano-CMOS | - |
| dc.subject.keywordAuthor | quantum confinement of inversion charge | - |
| dc.subject.keywordAuthor | raised S/D | - |
| dc.subject.keywordAuthor | selective Ge | - |
| dc.subject.keywordAuthor | threshold voltage shift | - |
| dc.subject.keywordAuthor | ultrathin body | - |
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