Reliability of thin gate oxides irradiated under X-ray lithography conditions

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The effect of X-ray lithography (XRL) process on the reliability of thin gate oxide has been investigated. A large increase in the low-field excess leakage current was observed on irradiated oxides, which was very similar to the electrical stress-induced leakage currents. However, it has been found that the long-term reliability of ultra-thin gate oxide is not affected by XRL process. The excess leakage current could be eliminated by thermal annealing at 400 degreesC and above and no residual damages in the oxide were observed after the annealing.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2001-04
Language
English
Article Type
Article; Proceedings Paper
Keywords

INDUCED LEAKAGE CURRENT; RADIATION-DAMAGE; MOS CAPACITORS; DEGRADATION; DEPENDENCE; SIO2-FILMS; BREAKDOWN; THICKNESS; BIPOLAR; DEVICES

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822

ISSN
0021-4922
DOI
10.1143/JJAP.40.2819
URI
http://hdl.handle.net/10203/82231
Appears in Collection
EE-Journal Papers(저널논문)
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