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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Journal Papers(저널논문)

Reliability of thin gate oxides irradiated under X-ray lithography conditions

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dc.contributor.authorCho, Byung Jinko
dc.contributor.authorKim, SJko
dc.contributor.authorAng, CHko
dc.contributor.authorLing, CHko
dc.contributor.authorJoo, MSko
dc.contributor.authorYeo, ISko
dc.date.accessioned2013-03-04T08:50:35Z-
dc.date.available2013-03-04T08:50:35Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-04-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.40, no.4B, pp.2819 - 2822-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/82231-
dc.description.abstractThe effect of X-ray lithography (XRL) process on the reliability of thin gate oxide has been investigated. A large increase in the low-field excess leakage current was observed on irradiated oxides, which was very similar to the electrical stress-induced leakage currents. However, it has been found that the long-term reliability of ultra-thin gate oxide is not affected by XRL process. The excess leakage current could be eliminated by thermal annealing at 400 degreesC and above and no residual damages in the oxide were observed after the annealing.-
dc.languageEnglish-
dc.publisherINST PURE APPLIED PHYSICS-
dc.subjectINDUCED LEAKAGE CURRENT-
dc.subjectRADIATION-DAMAGE-
dc.subjectMOS CAPACITORS-
dc.subjectDEGRADATION-
dc.subjectDEPENDENCE-
dc.subjectSIO2-FILMS-
dc.subjectBREAKDOWN-
dc.subjectTHICKNESS-
dc.subjectBIPOLAR-
dc.subjectDEVICES-
dc.titleReliability of thin gate oxides irradiated under X-ray lithography conditions-
dc.typeArticle-
dc.identifier.wosid000170771900052-
dc.identifier.scopusid2-s2.0-0035300714-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.issue4B-
dc.citation.beginningpage2819-
dc.citation.endingpage2822-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS-
dc.identifier.doi10.1143/JJAP.40.2819-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorKim, SJ-
dc.contributor.nonIdAuthorAng, CH-
dc.contributor.nonIdAuthorLing, CH-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorYeo, IS-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorX-ray lithography-
dc.subject.keywordAuthorultra-thin gate oxide-
dc.subject.keywordAuthorradiation-induced leakage current (RILC)-
dc.subject.keywordAuthorstress-induced leakage current (SILC)-
dc.subject.keywordAuthorquasi-breakdown-
dc.subject.keywordPlusINDUCED LEAKAGE CURRENT-
dc.subject.keywordPlusRADIATION-DAMAGE-
dc.subject.keywordPlusMOS CAPACITORS-
dc.subject.keywordPlusDEGRADATION-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusSIO2-FILMS-
dc.subject.keywordPlusBREAKDOWN-
dc.subject.keywordPlusTHICKNESS-
dc.subject.keywordPlusBIPOLAR-
dc.subject.keywordPlusDEVICES-
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EE-Journal Papers(저널논문)
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