Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation

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The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact. (C) 2002 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2002-04
Language
English
Article Type
Article
Keywords

INVERSION LAYER MOBILITY; NO-NITRIDED SIO2; ELECTRICAL-PROPERTIES; GATE DIELECTRICS; BORON-DIFFUSION; MOS-TRANSISTORS; OXIDE MOSFETS; ULTRATHIN; PENETRATION

Citation

ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28

ISSN
1099-0062
DOI
10.1149/1.1459682
URI
http://hdl.handle.net/10203/82038
Appears in Collection
EE-Journal Papers(저널논문)
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