DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ang, CH | ko |
dc.contributor.author | Tan, SS | ko |
dc.contributor.author | Lek, CM | ko |
dc.contributor.author | Lin, W | ko |
dc.contributor.author | Zheng, ZJ | ko |
dc.contributor.author | Chen, T | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-04T07:42:07Z | - |
dc.date.available | 2013-03-04T07:42:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-04 | - |
dc.identifier.citation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.5, no.4, pp.26 - 28 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://hdl.handle.net/10203/82038 | - |
dc.description.abstract | The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxides (1.8 and 2.6 nm) have been investigated and compared with NO nitridation. It is found that plasma-nitrided oxides are more immune to nitridation-induced degradation of channel hole mobility, and have lower intrinsic interface-trap density as compared to NO-nitrided oxides. In addition, plasma-nitrided oxides can further suppress hole mobility degradation induced by boron penetration. The superior performance of nitrogen plasma nitridation is attributed to its capability of incorporating a high level of nitrogen at the top oxide surface, while keeping the Si-SiO2 interface intact. (C) 2002 The Electrochemical Society. | - |
dc.language | English | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | INVERSION LAYER MOBILITY | - |
dc.subject | NO-NITRIDED SIO2 | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | BORON-DIFFUSION | - |
dc.subject | MOS-TRANSISTORS | - |
dc.subject | OXIDE MOSFETS | - |
dc.subject | ULTRATHIN | - |
dc.subject | PENETRATION | - |
dc.title | Suppression of nitridation-induced interface traps and hole mobility degradation by nitrogen plasma nitridation | - |
dc.type | Article | - |
dc.identifier.wosid | 000175314300016 | - |
dc.identifier.scopusid | 2-s2.0-0036535580 | - |
dc.type.rims | ART | - |
dc.citation.volume | 5 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 26 | - |
dc.citation.endingpage | 28 | - |
dc.citation.publicationname | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.identifier.doi | 10.1149/1.1459682 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Ang, CH | - |
dc.contributor.nonIdAuthor | Tan, SS | - |
dc.contributor.nonIdAuthor | Lek, CM | - |
dc.contributor.nonIdAuthor | Lin, W | - |
dc.contributor.nonIdAuthor | Zheng, ZJ | - |
dc.contributor.nonIdAuthor | Chen, T | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | INVERSION LAYER MOBILITY | - |
dc.subject.keywordPlus | NO-NITRIDED SIO2 | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | BORON-DIFFUSION | - |
dc.subject.keywordPlus | MOS-TRANSISTORS | - |
dc.subject.keywordPlus | OXIDE MOSFETS | - |
dc.subject.keywordPlus | ULTRATHIN | - |
dc.subject.keywordPlus | PENETRATION | - |
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