PVD HfO2 for high-precision MIM capacitor applications

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Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-06
Language
English
Article Type
Article
Keywords

INSULATOR-METAL CAPACITORS; DIELECTRICS

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389

ISSN
0741-3106
DOI
10.1109/LED.2003.813381
URI
http://hdl.handle.net/10203/81897
Appears in Collection
EE-Journal Papers(저널논문)
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