PVD HfO2 for high-precision MIM capacitor applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim SJ | ko |
| dc.contributor.author | Cho, Byung Jin | ko |
| dc.contributor.author | Li MF | ko |
| dc.contributor.author | Yu XF | ko |
| dc.contributor.author | Zhu CX | ko |
| dc.contributor.author | Chin A | ko |
| dc.contributor.author | Kwong DL | ko |
| dc.date.accessioned | 2013-03-04T04:27:49Z | - |
| dc.date.available | 2013-03-04T04:27:49Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-06 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/81897 | - |
| dc.description.abstract | Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | INSULATOR-METAL CAPACITORS | - |
| dc.subject | DIELECTRICS | - |
| dc.title | PVD HfO2 for high-precision MIM capacitor applications | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000184254700007 | - |
| dc.identifier.scopusid | 2-s2.0-0043093732 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 24 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 387 | - |
| dc.citation.endingpage | 389 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2003.813381 | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | Kim SJ | - |
| dc.contributor.nonIdAuthor | Li MF | - |
| dc.contributor.nonIdAuthor | Yu XF | - |
| dc.contributor.nonIdAuthor | Zhu CX | - |
| dc.contributor.nonIdAuthor | Chin A | - |
| dc.contributor.nonIdAuthor | Kwong DL | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | capacitance density | - |
| dc.subject.keywordAuthor | HfO2 | - |
| dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
| dc.subject.keywordAuthor | sputter | - |
| dc.subject.keywordAuthor | voltage coefficient of capacitor (VCC) | - |
| dc.subject.keywordPlus | INSULATOR-METAL CAPACITORS | - |
| dc.subject.keywordPlus | DIELECTRICS | - |
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