High-Q poly-to-poly capacitor for RF integrated circuits

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A very high-Q poly-to-poly capacitor structure is proposed and measurement results are presented. The poly-to-poly capacitor is designed using a conventional 0.35 mum CMOS process. By optimising the design a Q-factor of > 120 is obtained at 2GHz.
Publisher
IEE-INST ELEC ENG
Issue Date
2001-01
Language
English
Article Type
Article
Keywords

TECHNOLOGY

Citation

ELECTRONICS LETTERS, v.37, no.1, pp.25 - 26

ISSN
0013-5194
URI
http://hdl.handle.net/10203/81366
Appears in Collection
EE-Journal Papers(저널논문)
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