High-Q poly-to-poly capacitor for RF integrated circuits
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Sang-Gug | ko |
| dc.contributor.author | Lee, JT | ko |
| dc.contributor.author | Choi, JK | ko |
| dc.date.accessioned | 2013-03-04T01:46:52Z | - |
| dc.date.available | 2013-03-04T01:46:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-01 | - |
| dc.identifier.citation | ELECTRONICS LETTERS, v.37, no.1, pp.25 - 26 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/81366 | - |
| dc.description.abstract | A very high-Q poly-to-poly capacitor structure is proposed and measurement results are presented. The poly-to-poly capacitor is designed using a conventional 0.35 mum CMOS process. By optimising the design a Q-factor of > 120 is obtained at 2GHz. | - |
| dc.language | English | - |
| dc.publisher | IEE-INST ELEC ENG | - |
| dc.subject | TECHNOLOGY | - |
| dc.title | High-Q poly-to-poly capacitor for RF integrated circuits | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000166565800018 | - |
| dc.identifier.scopusid | 2-s2.0-0035124573 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 37 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 25 | - |
| dc.citation.endingpage | 26 | - |
| dc.citation.publicationname | ELECTRONICS LETTERS | - |
| dc.contributor.localauthor | Lee, Sang-Gug | - |
| dc.contributor.nonIdAuthor | Lee, JT | - |
| dc.contributor.nonIdAuthor | Choi, JK | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
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