Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects

Cited 20 time in webofscience Cited 0 time in scopus
  • Hit : 383
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorilgweon kimko
dc.contributor.authorsangyeon hanko
dc.contributor.authorkwangseok hanko
dc.contributor.authorjongho leeko
dc.contributor.authorhyungcheol shinko
dc.date.accessioned2013-03-03T22:53:06Z-
dc.date.available2013-03-03T22:53:06Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-02-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/80806-
dc.description.abstractA metal oxide semiconductor (MOS) memory based on Si nanocrystals has been fabricated. We have developed a repeatable process for forming uniform, small and high-density Si nanocrystals by low pressure chemical vapor deposition (LPCVD). Spherical nanocrystals with a 4.5 nm average diameter and a density of 5 x 10(11/)cm(2) were obtained. A single transistor memory-cell structure, with a change in threshold voltage of about 0.48 V, corresponding to single electron storage in individual nanocrystals and having the capability of long-term charge storage is fabricated and characterized. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of Delta V-GS approximate to 1.7 V, corresponding to single and multiple electron storage is reported. These finding prove the feasibility of a practical nanocrystal memory with potential for significantly high density, low power, and fast reading properties.-
dc.languageEnglish-
dc.publisherJapan Soc Applied Physics-
dc.subjectQUANTUM-DOT-
dc.titleSi Nano-Crystal Memory Cell with Room Temperature Single Electron Effects-
dc.typeArticle-
dc.identifier.wosid000168355600001-
dc.identifier.scopusid2-s2.0-0035246552-
dc.type.rimsART-
dc.citation.volume40-
dc.citation.issue2A-
dc.citation.beginningpage447-
dc.citation.endingpage451-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.localauthorhyungcheol shin-
dc.contributor.nonIdAuthorilgweon kim-
dc.contributor.nonIdAuthorsangyeon han-
dc.contributor.nonIdAuthorkwangseok han-
dc.contributor.nonIdAuthorjongho lee-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorquantum dots-
dc.subject.keywordAuthorsingle electron effect-
dc.subject.keywordAuthorCoulomb blockade effect-
dc.subject.keywordAuthornanocrystal memory-
dc.subject.keywordAuthordirect tunneling-
dc.subject.keywordPlusQUANTUM-DOT-
Appears in Collection
RIMS Journal Papers
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 20 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0