Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method

Cited 18 time in webofscience Cited 0 time in scopus
  • Hit : 213
  • Download : 467
Etching and passivation effects of hydrogen treatment of boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) film used as a p layer of p-i-n type amorphous silicon based solar cells using a mercury-sensitized photochemical vapor deposition method were investigated, For the hydrogen treatment of the p-layer film, longer p-layer deposition time was needed to obtain the same thickness as for no hydrogen treatment because of hydrogen etching effect, However, the cell performance was improved by similar to 7% due to an increase in the open circuit voltage (V-oc) and fill factor (FF) although the p-layer thickness was nearly identical in both cases, The increase in the V-oc and FF could be explained by an increase in the built-in potential due to a decrease in the film activation energy. Moreover, the electrical property improvement of the film was well explained by the passivation effect of a SiH2/SiH ratio decrease and a hydrogen content increase calculated from Fourier transformed infrared absorption measurements. (C) 1997 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
1997
Language
English
Article Type
Article
Keywords

SPECTROSCOPIC ELLIPSOMETRY

Citation

APPLIED PHYSICS LETTERS, v.71, pp.1846 - 1848

ISSN
0003-6951
DOI
10.1063/1.119418
URI
http://hdl.handle.net/10203/77348
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
A1997XY99300034.pdf(298.38 kB)Download
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 18 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0